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BFU610F npn wideband silicon germanium rf transistor rev. 01 ? 17 june 2010 objective data sheet 1. product profile 1.1 general description npn silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter sot343f package. 1.2 features and benefits ? 40 ghz f t silicon germanium technology ? high associated gain 12 db at 12 ghz ? low noise high gain microwave transistor ? noise figure (nf) = 1.4 db at 5.8 ghz 1.3 applications ? 2nd lna stage and mixer stage in dbs lnb?s ? analog/digital cordless applications ? ka band oscillators dro?s ? low noise amplifiers for microwave communications systems ? satellite radio ? wlan and cdma applications 1.4 quick reference data [1] g p(max) is the maximum power gain, if k > 1. if k < 1 then g p(max) = msg. [2] t sp is the temperature at the solder point of the emitter lead. table 1. quick reference data symbol parameter conditions min typ max unit c cbs collector-base capacitance v cb =2v; f=1mhz; v be =[tbd]v -70-ff f t transition frequency v ce =2v; i c =25ma; f=2ghz; t amb = 25 c -40-ghz g p(max) maximum power gain f = 5.8 ghz; i c =8ma; v ce =2v; t amb =25c [1] -21-db h fe dc current gain v ce =2v; i c =10ma; t j =25c 70 140 270 i c collector current - - 10 ma p tot total power dissipation t sp 90 c; see figure 1 [2] --50mw v cbo collector-base voltage i e =0a --10v v ceo collector-emitter voltage i b =0a --5v v ebo emitter-base voltage i c =0a --0.55v
BFU610F all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. objective data sheet rev. 01 ? 17 june 2010 2 of 12 nxp semiconductors BFU610F npn wideband silicon germanium rf transistor 2. pinning information 3. ordering information 4. marking 5. limiting values [1] t sp is the temperature at the solder point of the emitter lead. table 2. pinning information pin symbol description simplified outline graphic symbol 1eemitter sot343f (dfp4) 2 b base 3eemitter 4 c collector 1 2 34 sym123 c e b table 3. ordering information type number package name description version BFU610F dfp4 plastic surface-mount ed flat pack package; 4 leads sot343f table 4. marking codes type number marking code BFU610F d1 table 5. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min typ max unit v cbo collector-base voltage i e =0a --10v v ceo collector-emitter voltage i b =0a --5v v ebo emitter-base voltage i c =0a --0.55v i c collector current - - 10 ma p tot total power dissipation t sp 90 c; see figure 1 [1] --50mw t stg storage temperature -65 - 150 c t j junction temperature - - 150 c
BFU610F all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. objective data sheet rev. 01 ? 17 june 2010 3 of 12 nxp semiconductors BFU610F npn wideband silicon germanium rf transistor fig 1. power derating curve t sp ( c) 0 160 120 40 80 001aah424 100 50 150 200 p tot (mw) 0
BFU610F all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. objective data sheet rev. 01 ? 17 june 2010 4 of 12 nxp semiconductors BFU610F npn wideband silicon germanium rf transistor 6. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-sp) thermal resistance from junction to solder point - 440 - k/w
BFU610F all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. objective data sheet rev. 01 ? 17 june 2010 5 of 12 nxp semiconductors BFU610F npn wideband silicon germanium rf transistor 7. characteristics [1] g p(max) is the maximum power gain, if k > 1. if k < 1 then g p(max) = msg. table 7. characteristics symbol parameter conditions min typ max unit v (br)cbo collector-base breakdown voltage i e =0ma; i c = 2.5 a; t j =25c 10--v v (br)ceo collector-emitter breakdown voltage i b =0ma; i c =1ma; t j =25c 5--v i cbo collector-base cut-off current i e =0ma; v cb = 4.5 v; t j = 25 c - - 100 na h fe dc current gain v ce =2v; i c =10ma; t j = 25 c 70 140 270 c cbs collector-base capacitance v cb = 2 v; f = 1 mhz; v be = [tbd] v - 70 - ff f t transition frequency v ce =2v; i c =25ma; f=2ghz; t amb = 25 c -40-ghz g p(max) maximum power gain f = 5.8 ghz; i c =8ma; v ce =2v; t amb =25c [1] -21-db f=1.8ghz; i c =8ma; v ce =2v; t amb =25c [1] -29-db f=1.5ghz; i c =8ma; v ce =2v; t amb =25c [1] - 30.4 - db f=2.4ghz; i c =8ma; v ce =2v; t amb =25c [1] -28-db f = 12 ghz; i c =8ma; v ce =2v; t amb =25c [1] - 14.3 - db |s 21 | 2 insertion power gain i c =8ma; v ce =2v; f=1.5ghz; t amb =25c -19-db i c =8ma; v ce =2v; f=1.8ghz; t amb =25c -18-db i c =8ma; v ce =2v; f=2.4ghz; t amb =25c - 17.5 - db i c =8ma; v ce =2v; f=5.8ghz; t amb =25c - 13.4 - db i c =8ma; v ce = 2 v; f = 12 ghz; t amb =25c -7.7-db p l(1db) output power at 1 db gain compression v ce =2v; f=1.5ghz; i c =25ma; z l =50 ? ; z s =50 ? -[tbd]-dbmw v ce =2v; f=2.4ghz; i c =25ma; z l =50 ? ; z s =50 ? -[tbd]-dbmw v ce =2v; f=1.8ghz; i c =25ma; z l =50 ? ; z s =50 ? -[tbd]-dbmw v ce =2v; f=5.8ghz; i c =25ma; z l =50 ? ; z s =50 ? -[tbd]-dbmw
BFU610F all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. objective data sheet rev. 01 ? 17 june 2010 6 of 12 nxp semiconductors BFU610F npn wideband silicon germanium rf transistor 8. package outline fig 2. package outline sot343f (dfp4) references outline version european projection issue date iec jedec jeita sot343f sot343 f 05-07-12 06-03-16 unit a max mm 0.4 0.3 0.75 0.65 0.7 0.5 2.2 1.8 0.25 0.10 1.35 1.15 0.48 0.38 2.2 2.0 b p dimensions (mm are the original dimensions) p lastic surface-mounted flat pack package; reverse pinning; 4 leads b 1 c d e e e 1 h e 1.15 1.3 l p w y 0.1 0.2 0 1 2 mm scale detail x l p c a e x h e d a y b p b 1 e 1 e wa m wa m 1 2 34
BFU610F all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. objective data sheet rev. 01 ? 17 june 2010 7 of 12 nxp semiconductors BFU610F npn wideband silicon germanium rf transistor 9. soldering fig 3. reflow soldering footprint for sot343f (dfp4) f ootprint information for reflow soldering sot343 f solder lands solder resist occupied area solder paste sot343f_fr 2.7 2.5 0.8 0.7 0.55 (4 ) 0.5 (3 ) 0.6 (3 ) 1.3 0.57 1.85 dimensions in mm
BFU610F all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. objective data sheet rev. 01 ? 17 june 2010 8 of 12 nxp semiconductors BFU610F npn wideband silicon germanium rf transistor fig 4. wave soldering footprint for sot343f (dfp4) footprint information for wave soldering sot343f sot343f_fw 1 1.425 (4 ) 0.9 (3 ) 3.65 3 2.575 2.3 1.8 1.75 solder lands solder resist occupied area preferred transport direction during soldering dimensions in mm
BFU610F all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. objective data sheet rev. 01 ? 17 june 2010 9 of 12 nxp semiconductors BFU610F npn wideband silicon germanium rf transistor 10. revision history table 8. revision history document id release date data sheet status change notice supersedes BFU610F v.1 20100617 objective data sheet - -
BFU610F all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. objective data sheet rev. 01 ? 17 june 2010 10 of 12 nxp semiconductors BFU610F npn wideband silicon germanium rf transistor 11. legal information 11.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple de vices. the latest product status information is available on the internet at url http://www.nxp.com . 11.2 definitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 11.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer?s third party customer(s) (hereinafter both referred to as ?application?). it is customer?s sole responsibility to check whether the nxp semiconductors product is suitable and fit for the application planned. customer has to do all necessary testing for the application in order to avoid a default of the application and the product. nxp semiconducto rs does not accept any liability in this respect. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as th e item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualific ation this document contains data fr om the preliminary specification. product [short] data sheet production this doc ument contains the product specification.
BFU610F all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. objective data sheet rev. 01 ? 17 june 2010 11 of 12 nxp semiconductors BFU610F npn wideband silicon germanium rf transistor non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive appl ications beyond nxp semiconductors? standard warranty and nxp semicond uctors? product specifications. 11.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode ? are trademarks of nxp b.v. hd radio and hd radio logo ? are trademarks of ibiquity digital corporation. 12. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BFU610F npn wideband silicon germanium rf transistor ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 17 june 2010 document identifier: BFU610F please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 13. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 6 thermal characteristics . . . . . . . . . . . . . . . . . . .4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . .6 9 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9 11 legal information. . . . . . . . . . . . . . . . . . . . . . . .10 11.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . .10 11.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 11.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 11.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 contact information. . . . . . . . . . . . . . . . . . . . . . 11

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